EFFECT OF POLING ON PIEZOELECTRIC PROPERTIES OF LEAD-ZIRCONATE-TITANATE THIN-FILMS FORMED BY SPUTTERING

被引：77

作者：

WATANABE, S

FUJIU, T

FUJII, T

机构：

[1] Opto-electronic Materials Laboratory, Nikon Corporation 1-10-1, Asamizodai, Sagamihara

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.113661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead zirconate titanate (PZT) thin film was formed on Pt/Ta/Si3N4/Si(100) substrate at 400°C by sputtering and then annealed at 650°C in air. The PZT film was 1 μm thick and had dielectric permittivity of 980, loss tangent of 0.05, remanent polarization of 31 μC/cm2, and coercive field of 110 kV/cm. Piezoelectric property of the film formed on silicon cantilever was estimated from the converse effect. Poling at 5 kV/mm increased the property by a factor of 1.2 to 3.4, resulting in converse piezoelectric constant (d31) varying from -84 to -102 pC/N.© 1995 American Institute of Physics.

引用

页码：1481 / 1483

页数：3

共 8 条

[1]

FUJII T, IN PRESS J VAC SCI A

[2] LEAD ZIRCONATE TITANATE FILMS BY RAPID THERMAL-PROCESSING [J].