DETERMINATION OF THE [110] AND [110] DIRECTIONS ON (001) GASB AND GASB-BASED WAFERS

被引:4
作者
CANEAU, C
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D O I
10.1149/1.2108499
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2658 / 2659
页数:2
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[1]  
BENZ KW, 1981, I PHYS C SER, V56, P131
[2]  
BOCHKAREV AE, 1985, KVANTOVAYA ELEKTRON+, V12, P1309
[3]   ROOM-TEMPERATURE GAINASSB/ALGAASSB DH INJECTION-LASERS AT 2.2 MU-M [J].
CANEAU, C ;
SRIVASTAVA, AK ;
DENTAI, AG ;
ZYSKIND, JL ;
POLLACK, MA .
ELECTRONICS LETTERS, 1985, 21 (18) :815-817
[4]   ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH [J].
KOBAYASHI, N ;
HORIKOSHI, Y ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L30-L32
[5]   LEC GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS WITH UNIFORM CARRIER CONCENTRATION DISTRIBUTION [J].
OHMORI, Y ;
SUGII, K ;
AKAI, S ;
MATSUMOTO, K .
JOURNAL OF CRYSTAL GROWTH, 1982, 60 (01) :79-85
[6]   PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].
TARUI, Y ;
KOMIYA, Y ;
HARADA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&