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LEC GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS WITH UNIFORM CARRIER CONCENTRATION DISTRIBUTION
被引:28
作者
:
OHMORI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
OHMORI, Y
[
1
]
SUGII, K
论文数:
0
引用数:
0
h-index:
0
机构:
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
SUGII, K
[
1
]
AKAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
AKAI, S
[
1
]
MATSUMOTO, K
论文数:
0
引用数:
0
h-index:
0
机构:
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
MATSUMOTO, K
[
1
]
机构
:
[1]
SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1982年
/ 60卷
/ 01期
关键词
:
D O I
:
10.1016/0022-0248(82)90174-9
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:79 / 85
页数:7
相关论文
共 11 条
[1]
CHIN AK, 1981, APPL PHYS LETT, V40, P248
[2]
INAS-GASB SUPERLATTICES-SYNTHESIZED SEMICONDUCTORS AND SEMIMETALS
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
52
(APR)
: 227
-
240
[3]
GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS
HILDEBRAND, O
论文数:
0
引用数:
0
h-index:
0
HILDEBRAND, O
KUEBART, W
论文数:
0
引用数:
0
h-index:
0
KUEBART, W
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
BENZ, KW
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
PILKUHN, MH
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
: 284
-
288
[4]
LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
MIYAZAWA, S
论文数:
0
引用数:
0
h-index:
0
MIYAZAWA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1982,
56
(01)
: 39
-
44
[5]
FACETS IN GASB CRYSTALS PULLED UNDER CONCAVE INTERFACE CONDITIONS
KUMAGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
KUMAGAWA, M
ASABA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
ASABA, Y
YAMADA, S
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
YAMADA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1977,
41
(02)
: 245
-
253
[6]
A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB
MIYAZAWA, S
论文数:
0
引用数:
0
h-index:
0
MIYAZAWA, S
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
NAGANUMA, M
论文数:
0
引用数:
0
h-index:
0
NAGANUMA, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(04)
: 670
-
674
[7]
TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF ALGAASSB-GASB DH LASERS
MOTOSUGI, G
论文数:
0
引用数:
0
h-index:
0
MOTOSUGI, G
KAGAWA, T
论文数:
0
引用数:
0
h-index:
0
KAGAWA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(11)
: 2303
-
2304
[8]
NAGANUMA M, 1981, P INT S GAAS RELATED, P125
[9]
COHERENT GUNN OSCILLATIONS IN GAXIN1-XSB
SEGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
SEGAWA, K
MIKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MIKI, H
OTSUBO, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
OTSUBO, M
SHIRAHATA, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
SHIRAHATA, K
FUJIBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
FUJIBAYASHI, K
[J].
ELECTRONICS LETTERS,
1976,
12
(05)
: 124
-
125
[10]
OBSERVATION OF GROWTH STRIATIONS IN UNDOPED GASB SINGLE-CRYSTALS
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(07)
: 1614
-
1616
←
1
2
→
共 11 条
[1]
CHIN AK, 1981, APPL PHYS LETT, V40, P248
[2]
INAS-GASB SUPERLATTICES-SYNTHESIZED SEMICONDUCTORS AND SEMIMETALS
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
52
(APR)
: 227
-
240
[3]
GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS
HILDEBRAND, O
论文数:
0
引用数:
0
h-index:
0
HILDEBRAND, O
KUEBART, W
论文数:
0
引用数:
0
h-index:
0
KUEBART, W
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
BENZ, KW
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
PILKUHN, MH
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
: 284
-
288
[4]
LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
MIYAZAWA, S
论文数:
0
引用数:
0
h-index:
0
MIYAZAWA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1982,
56
(01)
: 39
-
44
[5]
FACETS IN GASB CRYSTALS PULLED UNDER CONCAVE INTERFACE CONDITIONS
KUMAGAWA, M
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
KUMAGAWA, M
ASABA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
ASABA, Y
YAMADA, S
论文数:
0
引用数:
0
h-index:
0
机构:
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SAIZUOKA 432,JAPAN
YAMADA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1977,
41
(02)
: 245
-
253
[6]
A NOVEL ENCAPSULANT MATERIAL FOR LEC GROWTH OF GASB
MIYAZAWA, S
论文数:
0
引用数:
0
h-index:
0
MIYAZAWA, S
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
NAGANUMA, M
论文数:
0
引用数:
0
h-index:
0
NAGANUMA, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(04)
: 670
-
674
[7]
TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF ALGAASSB-GASB DH LASERS
MOTOSUGI, G
论文数:
0
引用数:
0
h-index:
0
MOTOSUGI, G
KAGAWA, T
论文数:
0
引用数:
0
h-index:
0
KAGAWA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(11)
: 2303
-
2304
[8]
NAGANUMA M, 1981, P INT S GAAS RELATED, P125
[9]
COHERENT GUNN OSCILLATIONS IN GAXIN1-XSB
SEGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
SEGAWA, K
MIKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MIKI, H
OTSUBO, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
OTSUBO, M
SHIRAHATA, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
SHIRAHATA, K
FUJIBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
FUJIBAYASHI, K
[J].
ELECTRONICS LETTERS,
1976,
12
(05)
: 124
-
125
[10]
OBSERVATION OF GROWTH STRIATIONS IN UNDOPED GASB SINGLE-CRYSTALS
TOHNO, S
论文数:
0
引用数:
0
h-index:
0
TOHNO, S
KATSUI, A
论文数:
0
引用数:
0
h-index:
0
KATSUI, A
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(07)
: 1614
-
1616
←
1
2
→