OBSERVATION OF GROWTH STRIATIONS IN UNDOPED GASB SINGLE-CRYSTALS

被引:12
作者
TOHNO, S
KATSUI, A
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D O I
10.1149/1.2127692
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1614 / 1616
页数:3
相关论文
共 5 条
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KATSUI, A ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L318-L320
[2]   X-RAY ANALYSIS OF STACKING FAULT STRUCTURES IN EPITAXIALLY GROWN SILICON [J].
SCHWUTTKE, GH ;
SILS, V .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3127-&
[5]  
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