X-RAY ANALYSIS OF STACKING FAULT STRUCTURES IN EPITAXIALLY GROWN SILICON

被引：24

作者：

SCHWUTTKE, GH

SILS, V

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 10期

关键词：

D O I：

10.1063/1.1729133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3127 / &

共 20 条

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