COMPUTER MODELS OF FIELD-EFFECT TRANSISTOR

[1] BREHM GE, 1966, 0366108 TECH REP, P21

[2] CHARGE CONTROL TRANSISTOR MODEL FOR IBM ELECTRONIC CIRCUIT ANALYSIS PROGRAM [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1966, CT13 (04): : 428 - &

[3] A SIMPLE DERIVATION FIELD-EFFECT TRANSISTOR CHARACTERISTICS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1146 - &

[4] POWER-LAW NATURE OF FIELD-EFFECT TRANSISTOR EXPERIMENTAL CHARACTERISTCS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1145 - &

[5] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[6] SEVIN LJ, 1965, FIELDEFFECT TRANISTO, P1

[7] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[8] 1965, 1620 EL CIRC AN PROG

[1] BREHM GE, 1966, 0366108 TECH REP, P21

[2] CHARGE CONTROL TRANSISTOR MODEL FOR IBM ELECTRONIC CIRCUIT ANALYSIS PROGRAM [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1966, CT13 (04): : 428 - &

[3] A SIMPLE DERIVATION FIELD-EFFECT TRANSISTOR CHARACTERISTICS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1146 - &

[4] POWER-LAW NATURE OF FIELD-EFFECT TRANSISTOR EXPERIMENTAL CHARACTERISTCS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1145 - &

[5] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 324 - +

[6] SEVIN LJ, 1965, FIELDEFFECT TRANISTO, P1

[7] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[8] 1965, 1620 EL CIRC AN PROG