SPREADING RESISTANCE CORRECTION FACTORS

被引：50

作者：

SCHUMANN, PA

GARDNER, EE

机构：

[1] IBM Components Division, East Fishkill Facility, Hopewell Junction

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期

关键词：

D O I：

10.1016/0038-1101(69)90092-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The solution for the potential distribution from a circular flat contact current source on a semi-infinite medium composed of N layers of finite thickness and different resistivities is given. This is applied to the three-point spreading resistance probe system in the form of correction factors. Examples are given which indicate when a single layer approximation may not be used. A general scheme for correcting any type of profile is proposed and compared with other correction techniques. © 1969.

引用

页码：371 / &

共 7 条

[1]

GARDNER EE, 1967, MEAS TECH, P258

[2]

GARDNER EE, 1966, S MANUFACTURING INPR, V2, P19

[3] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[4] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J].

MAZUR, RG ;

DICKEY, DH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :255-&

[5]

SCHUMANN PA, 1966, J ELECTROCHEM SOC

[6]

SCHWARTZ B, 1967, MEASUREMENT TECHN ED, P258

[7]

YEH TH, 1968, RNP295 EL SOC BOST

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