FABRICATION OF SUBMICROMETER FREESTANDING SINGLE-CRYSTAL GALLIUM-ARSENIDE AND SILICON STRUCTURES FOR QUANTUM TRANSPORT STUDIES

被引：26

作者：

HASKO, DG

POTTS, A

CLEAVER, JRA

SMITH, CG

AHMED, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1849 / 1851

页数：3

共 4 条

[1] THERMAL ANOMALIES IN VERY FINE-STRUCTURES
KELLY, MJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : L969 - L973
[2] FABRICATION OF FREESTANDING SINGLE-CRYSTAL SILICON WIRES
POTTS, A
HASKO, DG
CLEAVER, JRA
AHMED, H
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 834 - 835
[3] PROBER DE, 1986, MICROELECTRON ENG, V5, P205
[4] FABRICATION AND PHONON TRANSPORT STUDIES IN NANOMETER SCALE FREESTANDING WIRES
SMITH, CG
AHMED, H
WYBOURNE, MN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 314 - 317