STRUCTURE OF INTERFACES IN A-SI-H/A-SINX-H SUPERLATTICES

被引：16

作者：

SANTOS, PV

HUNDHAUSEN, M

LEY, L

VICZIAN, C

机构：

[1] UNIV ESTADUAL CAMPINAS,INST PHYS GLEB WATAGUIN,BR-13081 CAMPINAS,SP,BRAZIL

[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[3] UNIV ERLANGEN NURNBERG,INST TECH PHYS,W-8520 ERLANGEN,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.347364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present experimental results on the atomic structure of the interfaces between a-Si: H and a-SiN(x):H layers obtained by analyzing the intensity of the Raman lines from zone-folded acoustic phonons and of the peaks of x-ray diffraction at grazing angles. We determine the width of these interfaces and their stability under thermal annealing in temperatures below the crystallization temperature.

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页码：778 / 785

页数：8

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