THEORY OF TRANSPORT NOISE IN SEMICONDUCTORS

被引：32

作者：

VANVLIET, KM ^{[1
]}

MEHTA, H ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1981年 / 106卷 / 01期

关键词：

D O I：

10.1002/pssb.2221060102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：11 / 30

页数：20

共 33 条

[1] CONTACT NOISE IN SEMICONDUCTORS [J].

BURGESS, RE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (400) :334-335

[2] ON THE INFLUENCE OF DIFFUSION AND SURFACE RECOMBINATION UPON THE GR NOISE SPECTRUM OF SEMICONDUCTORS [J].

CHAMPLIN, KS .

PHYSICA, 1960, 26 (09) :751-760

[3]

HSIEH CS, 1974, THESIS U FLORIDA

[4]

HYDE FJ, 1956, REP C PHYS SOC SEMIC, P57

[5] INFLUENCE OF TRAPPING, DIFFUSION AND RECOMBINATION ON CARRIER CONCENTRATION FLUCTUATIONS [J].

LAX, M ;

MENGERT, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :248-267

[6] FLUCTUATIONS FROM THE NONEQUILIBRIUM STEADY STATE [J].

LAX, M .

REVIEWS OF MODERN PHYSICS, 1960, 32 (01) :25-64

[7] A THEORY OF CONTACT NOISE IN SEMICONDUCTORS [J].

MACFARLANE, GG .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1950, 63 (370) :807-814

[8] GENERAL TRANSPORT-THEORY OF NOISE IN P-N JUNCTION-LIKE DEVICES .3. JUNCTION NOISE IN P+-N DIODES AT HIGH INJECTION [J].

MIN, HS ;

VANVLIET, KM ;

VANDERZI.A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02) :605-&

[9] GENERAL TRANSPORT-THEORY OF NOISE IN P-N JUNCTION-LIKE DEVICES .5. TERMINAL NOISE OF P+-N DIODES AT HIGH INJECTION [J].

MIN, HS ;

VANVLIET, KM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02) :653-&

[10]

MIN HS, 1973, PHYS STAT SOL A, V13, P701

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