PHOTOELECTROCHEMICAL BEHAVIOR OF GAAS MODIFIED BY ELECTRODEPOSITION OF HETEROPOLYANIONS

被引：10

作者：

ALLONGUE, P ^{[1
]}

CACHET, H ^{[1
]}

FOURNIER, M ^{[1
]}

YAO, NA ^{[1
]}

机构：

[1] UNIV PIERRE & MARIE CURIE,PHYSICOCHIM INORGAN LAB,F-75252 PARIS 05,FRANCE

来源：

ELECTROCHIMICA ACTA | 1988年 / 33卷 / 05期

关键词：

CATALYSTS - CHEMICAL REACTIONS - Photochemical Reactions - ELECTRIC MEASUREMENTS - Impedance - HYDROGEN - Production - SEMICONDUCTING GALLIUM ARSENIDE - Surfaces;

D O I：

10.1016/0013-4686(88)80069-0

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A reductive deposition of 18-tungsto-diphosphate heteropolyanions (HPA) P//2W//1//8O//6//2**6** minus is performed at n and p-GaAs surfaces. It is found by electrical measurements (I-V, impedance) and surface observations (SEM, TEM) that the treatment is more efficient and durable when it is performed at pH equals 0. Photocapacitance measurements in that case reveal that the HPA surface modification induces surface states in the lower and the upper part of the band gap of GaAs. Such a distribution is able to explain both the observed improved H//2 evolution at n and p-GaAs and the better stability of photoanodes.

引用

页码：693 / 699

页数：7

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