INTRINSIC AND EXTRINSIC RECOMBINATION RADIATION FROM UNDOPED AND BORON-DOPED DIAMONDS FORMED BY PLASMA CHEMICAL VAPOR-DEPOSITION

被引：44

作者：

KAWARADA, H

YOKOTA, Y

HIRAKI, A

机构：

[1] Faculty of Engineering, Osaka University, Suita

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.

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页码：1889 / 1891

页数：3

相关论文

共 10 条

[1] INTRINSIC AND EXTRINSIC CATHODOLUMINESCENCE FROM SINGLE-CRYSTAL DIAMONDS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

COLLINS, AT ;

KAMO, M ;

SATO, Y .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (25) :4029-4033

[2]

DEAN PJ, 1964, PHYS REV, V133, P1698

[3]

DEAN PJ, 1965, PHYS REV A, V140, P352

[4]

KAARADA H, 1990, J APPL PHYS, V67, P983

[5] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J].

KAMO, M ;

SATO, Y ;

MATSUMOTO, S ;

SETAKA, N .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :642-644

[6] BLUE AND GREEN CATHODOLUMINESCENCE OF SYNTHESIZED DIAMOND FILMS FORMED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].

KAWARADA, H ;

NISHIMURA, K ;

ITO, T ;

SUZUKI, J ;

MAR, KS ;

YOKOTA, Y ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04) :L683-L686

[7] CATHODOLUMINESCENCE OF DEFECTS IN DIAMOND FILMS AND PARTICLES GROWN BY HOT-FILAMENT CHEMICAL-VAPOR DEPOSITION [J].

ROBINS, LH ;

COOK, LP ;

FARABAUGH, EN ;

FELDMAN, A .

PHYSICAL REVIEW B, 1989, 39 (18) :13367-13377

[8] PHOTO-LUMINESCENCE OBSERVATION OF DONOR PAIRS IN SILICON [J].

SHIRAKI, Y ;

NAKASHIMA, H .

SOLID STATE COMMUNICATIONS, 1979, 29 (03) :295-298

[9] DETERMINATION OF BORON AND PHOSPHORUS CONCENTRATION IN SILICON BY PHOTO-LUMINESCENCE ANALYSIS [J].

TAJIMA, M .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :719-721

[10] CATHODOLUMINESCENCE, OPTICAL-ABSORPTION AND X-RAY TOPOGRAPHIC STUDIES OF SYNTHETIC DIAMONDS [J].

WOODS, GS ;

LANG, AR .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (02) :215-226