DETERMINATION OF BORON AND PHOSPHORUS CONCENTRATION IN SILICON BY PHOTO-LUMINESCENCE ANALYSIS

被引：167

作者：

TAJIMA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 11期

关键词：

D O I：

10.1063/1.89897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：719 / 721

页数：3

共 9 条

[1] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[2] TEMPERATURE-DEPENDENCE OF ELECTRON-HOLE-LIQUID LUMINESCENCE IN SI [J].

HAMMOND, RB ;

MCGILL, TC ;

MAYER, JW .

PHYSICAL REVIEW B, 1976, 13 (08) :3566-3575

[3] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[4] SIMULTANEOUS DETERMINATION OF TOTAL CONTENT OF BORON AND PHOSPHORUS IN HIGH-RESISTIVITY SILICON BY IR SPECTROSCOPY AT LOW-TEMPERATURES [J].

KOLBESEN, BO .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :353-355

[5] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[6] IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON [J].

LONG, D ;

MYERS, J .

PHYSICAL REVIEW, 1959, 115 (05) :1107-1118

[7] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J].

SAUER, R .

PHYSICAL REVIEW LETTERS, 1973, 31 (06) :376-379

[8] CORRELATION BETWEEN PHOTOLUMINESCENCE SPECTRA AND IMPURITY CONCENTRATIONS IN SILICON [J].

TAJIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) :2265-2266

[9] PHOTOLUMINESCENCE ANALYSES OF SHALLOW IMPURITIES IN SILICON [J].

TAJIMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) :2263-2264

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