SIMULTANEOUS DETERMINATION OF TOTAL CONTENT OF BORON AND PHOSPHORUS IN HIGH-RESISTIVITY SILICON BY IR SPECTROSCOPY AT LOW-TEMPERATURES

被引：33

作者：

KOLBESEN, BO ^{[1
]}

机构：

[1] SIEMENS AG,GRUNDLAGENENTWICKLUNG HALBLEITER,POB 460705,8 MUNICH,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 06期

关键词：

D O I：

10.1063/1.88474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：353 / 355

页数：3

共 15 条

[1]

BYKOVA EM, 1973, SOV PHYS SEMICOND+, V7, P671

[2]

Haller E., COMMUNICATION

[3] HIGH-RESOLUTION FOURIER-TRANSFORM SPECTROSCOPY OF SHALLOW ACCEPTORS IN ULTRA-PURE GERMANIUM [J].

HALLER, EE ;

HANSEN, WL .

SOLID STATE COMMUNICATIONS, 1974, 15 (04) :687-692

[4] SHALLOW IMPURITY TRAPS AND ELECTRON TRANSFER DYNAMICS IN N-TYPE SILICON AT LIQUID HELIUM TEMPERATURES [J].

HONIG, A ;

LEVITT, R .

PHYSICAL REVIEW LETTERS, 1960, 5 (03) :93-96

[5] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) :148-153

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[7] IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON [J].

LONG, D ;

MYERS, J .

PHYSICAL REVIEW, 1959, 115 (05) :1107-1118

[8] MG DIFFUSION IN PARA TYPE SI TO MEASURE RESIDUAL-P CONCENTRATION BY INFRARED-ABSORPTION [J].

PAJOT, B ;

TARAVELLA, G ;

BOUCHAUD, JP .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :189-191

[9] IMPURITY LINES OF BORON + PHOSPHORUS IN SILICON [J].

PAJOT, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (06) :613-&

[10] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .2. GROUP-V DONORS [J].

PICUS, G ;

BURSTEIN, E ;

HENVIS, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :75-81

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