IMPURITY LINES OF BORON + PHOSPHORUS IN SILICON

被引：10

作者：

PAJOT, B

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1964年 / 25卷 / 06期

关键词：

D O I：

10.1016/0022-3697(64)90150-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：613 / &

共 18 条

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[2]

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[3]

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KAISER, RH .

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[5] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

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[6] ABSORPTION SPECTRUM OF ARSENIC DOPED SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (2-3) :236-239

[7] PHONON BROADENING OF IMPURITY LINES [J].

KANE, EO .

PHYSICAL REVIEW, 1960, 119 (01) :40-42

[8] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[9] BROADENING OF IMPURITY LEVELS IN SILICON [J].

LAX, M ;

BURSTEIN, E .

PHYSICAL REVIEW, 1955, 100 (02) :592-602

[10] CONCENTRATION EFFECTS ON THE LINE SPECTRA OF BOUND HOLES IN SILICON [J].

NEWMAN, R .

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