PREBAKE EFFECTS IN CHEMICAL AMPLIFICATION ELECTRON-BEAM RESIST

被引：10

作者：

AZUMA, T ^{[1
]}

MASUI, K ^{[1
]}

TAKIGAMI, Y ^{[1
]}

SASAKI, H ^{[1
]}

SAKAI, K ^{[1
]}

NOMAKI, T ^{[1
]}

KATO, Y ^{[1
]}

MORI, I ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期

关键词：

PREBAKE; CHEMICAL AMPLIFICATION; ELECTRON-BEAM RESIST; RESOLUTION; RESIDUAL SOLVENT; DIFFUSION; ACID CATALYST;

D O I：

10.1143/JJAP.30.3138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Prebake effects in chemical amplification electron-beam resist SAL601-ER7 have been investigated. Resolution of the resist is found to be greatly dependent on the prebake conditions when a thick resist film is used. The results of FT-IR and GC/MS analysis suggest that differences in the resolution between thin and thick resist films are due to the residual solvent content which depends on prebake temperature. Because the residual solvent in the resist film is thought to act as a kind of reaction medium, it can be concluded that it affects the diffusion length of the acid catalyst.

引用

页码：3138 / 3141

页数：4

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