LOW-TEMPERATURE PREPARATION OF PB(ZR, TI)O3 THIN-FILMS ON (PB, LA)TIO3 BUFFER LAYER BY MULTI-ION-BEAM SPUTTERING

被引：64

作者：

KANNO, I

HAYASHI, S

KAMADA, T

KITAGAWA, M

HIRAO, T

机构：

[1] Central Research Laboratories, Matsushita Electric Industrial Co. Ltd, Moriguchi, OSK, 570

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

PZT; PLT; FERROELECTRIC THIN FILM; MULTI-ION-BEAM SPUTTERING;

D O I：

10.1143/JJAP.32.4057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric lead-zirconate-titanate (PZT) thin films were successfully fabricated by the multi-ion-beam sputtering technique in an oxygen ambient at a low substrate temperature of 415-degrees-C. By inserting lead-lanthanum-titanate (PLT) buffer layers between substrates and PZT films, the perovskite-PZT thin films could be epitaxially grown on (100)MgO, (100)Pt/MgO and (111)Pt/Ti/SiO2/Si substrates. These films, even at thickness values of as low as 630 angstrom, showed excellent ferroelectric properties with a remanent polarization of 20 muC/cm2, coercive field of 200 kV/cm, and a relative dielectric constant of 700.

引用

页码：4057 / 4060

页数：4

共 7 条

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