SINGLE-TARGET SPUTTRING PROCESS FOR LEAD ZIRCONATE TITANATE THIN-FILMS WITH PRECISE COMPOSITION CONTROL

被引：40

作者：

TORII, K

KAGA, T

KUSHIDA, K

TAKEUCHI, H

TAKEDA, E

机构：

[1] Central Research Lab, Hitachi Ltd, Kokubunji, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

PZT; SPUTTER; THIN FILM; COMPOSITION; CRYSTALLIZATION TEMPERATURE; DIELECTRIC CONSTANT; X-RAY DIFFRACTION;

D O I：

10.1143/JJAP.30.3562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of growth conditions on rf-magnetron sputtered lead zirconate titanate (or PZT) thin films has been investigated, and the structural and electrical properties of PZT thin films have been examined. It was found that the Pb content in a sputtered film is proportional to rf power, thereby making it possible to control the film composition precisely. A well-crystallized perovskite structure was obtained by postdeposition annealing at 590-degrees-C. A stoichiometric film (i.e., Pb/ Zr + Ti = 1) had a dielectric constant value of 1180.

引用

页码：3562 / 3566

页数：5

共 7 条

[1] PIEZOELECTRIC PROPERTIES OF POLYCRYSTALLINE LEAD TITANATE ZIRCONATE COMPOSITIONS [J].