N-TYPE DOPING OF THE DILUTED MAGNETIC SEMICONDUCTOR ZN1-XMNXSE

We report on the intentional n-type doping of the diluted magnetic semiconductor Zn1-xMnxSe using ZnCl2 as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x-ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018cm-3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures. © 1995 American Institute of Physics.