MULTILAYER GROWTH-PROCESS OF C-60 ON A SI(111) 7X7 SURFACE

被引：26

作者：

SATO, T

SUEYOSHI, T

IWATSUKI, M

机构：

[1] JEOL Ltd., Akishima, Tokyo, 196

来源：

SURFACE SCIENCE | 1994年 / 321卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)90017-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy has been applied to study the multilayer growth process of C-60 molecules on a si(111)7 x 7 surface. We have observed the local ordering of the first C-60 layer formed on the 7 x 7 structure at room temperature. This local ordering structure is made of distinct double domains in each of which the arrangement direction of C-60 molecules deviates +11 degrees or -11 degrees from the Si[($) over bar 211] direction. This structure coincides with the interfacial structure model proposed by Hang Xu et al. [Phys. Rev. Lett. 70 (1993) 1850]. The island growth of C-60 starts on this local ordering area when the coverage exceeds approximately 1 monolayer.

引用

页码：L137 / L142

页数：6

共 8 条

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