PLANAR SILICON FIELD-EFFECT TRANSISTORS WITH LANGMUIR-BLODGETT GATE INSULATORS

被引：19

作者：

FUNG, CD ^{[1
]}

LARKINS, GL ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,CASE INST TECHN,DEPT MACROMOLEC SCI,CLEVELAND,OH 44106

来源：

THIN SOLID FILMS | 1985年 / 132卷 / 1-4期

关键词：

D O I：

10.1016/0040-6090(85)90454-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：33 / 39

页数：7

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