OPTICAL SPECTROSCOPY AND FIELD-ENHANCED EMISSION OF AN OXIDE TRAP INDUCED BY HOT-HOLE INJECTION IN A SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：16

作者：

BOURCERIE, M ^{[1
]}

MARCHETAUX, JC ^{[1
]}

BOUDOU, A ^{[1
]}

VUILLAUME, D ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,ISEN,UA 253,F-59046 LILLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.102058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2193 / 2195

页数：3

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