CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS

被引：284

作者：

HEREMANS, P

BELLENS, R

GROESENEKEN, G

MAES, HE

机构：

[1] Interuniv Micro-Electronies Cent, Louvain, Belg

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

Manuscript received April 13; 1988; revised July 10; 1988. P. Here-mans is a research assistant of the Belgian National Fund for Scientific Research. This work was supported by BTMC Alcatel within an IWONL project. The authors are with the Interuniversity Micro-Electronics Center (IMEC). Kapeldreef 75; B-3030; Leuven; Belgium. IEEE Log Number 8823785;

D O I：

10.1109/16.8794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2194 / 2209

页数：16

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