A STUDY ON STRESS-INDUCED MIGRATION IN ALUMINUM METALLIZATION BASED ON DIRECT STRESS MEASUREMENTS

被引：29

作者：

HINODE, K

ASANO, I

ISHIBA, T

HOMMA, Y

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：495 / 498

页数：4

共 18 条

[11]

Mayumi S., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P15, DOI 10.1109/IRPS.1987.362149

[12]

OWADA N, 1985, 2ND P INT VLSI MULT, P173

[13] TEMPERATURE-DEPENDENCE OF THE STRESS IN PSG-AL-SI STRUCTURES [J].

SUGAKI, S ;

SHINTANI, A ;

NAKASHIMA, H .

[14]

TEZAKI A, 1989, 2ND P ECS JAP S, P14

[15]

Turner T., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P142, DOI 10.1109/IRPS.1985.362089

[16]

YAMAMOTO N, 1989, 21ST C SOL STAT DEV, P221

[17]

Yost F. G., 1989, 27th Annual Proceedings. Reliability Physics 1989 (Cat. No.89CH2650-0), P193, DOI 10.1109/RELPHY.1989.36344

[18]

Yue J. T., 1985, 23rd Annual Proceedings Reliability Physics 1985 (Cat. No. 85CH2113-9), P126, DOI 10.1109/IRPS.1985.362087