TIME-RESOLVED RAMAN MEASUREMENT OF INTERVALLEY SCATTERING IN GASB

被引：9

作者：

MALY, P ^{[1
]}

MACIEL, AC ^{[1
]}

RYAN, JF ^{[1
]}

MASON, NJ ^{[1
]}

WALKER, PJ ^{[1
]}

机构：

[1] CHARLES UNIV,DEPT CHEM PHYS,CS-11636 PRAGUE 1,CZECH REPUBLIC

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved Raman spectroscopy with subpicosecond resolution has been used to measure L-GAMMA intervalley scattering of photoexcited electrons in GaSb. Our experiment measures directly the time-dependent occupancy of non-equilibrium longitudinal optic phonons with wavevector approximately 10(6) cm-1 which are generated by intra-GAMMA relaxation of electrons near the GAMMA minimum. The phonon population shows a two-component decay: at times less than or similar to 10 ps, phonons are generated by direct electron relaxation within the GAMMA valley, and their decay is due to anharmonicity and reabsorption. At later times the phonon decay rate slows, as L-GAMMA intervalley scattering heats electrons at GAMMA. At low temperature the intervalley relaxation time is measured to be 54 ps, corresponding to an effective intervalley deformation potential D(GAMMAL) = 3.2 eV angstrom-1.

引用

页码：719 / 721

页数：3

共 14 条

[1] DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE [J].

AARDVARK, A ;

ALLOGHO, GG ;

BOUGNOT, G ;

DAVID, JPR ;

GIANI, A ;

HAYWOOD, SK ;

HILL, G ;

KLIPSTEIN, PC ;

MANSOOR, F ;

MASON, NJ ;

NICHOLAS, RJ ;

PASCALDELANNOY, F ;

PATE, M ;

PONNAMPALAM, L ;

WALKER, PJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S380-S385

[2] RESONANT INTERVALLEY SCATTERING IN GAAS [J].

BIGOT, JY ;

PORTELLA, MT ;

SCHOENLEIN, RW ;

CUNNINGHAM, JE ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1990, 65 (27) :3429-3432

[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[4] CONTINUOUS-WAVE SPECTROSCOPY OF FEMTOSECOND CARRIER SCATTERING IN GAAS [J].

FASOL, G ;

HACKENBERG, W ;

HUGHES, HP ;

PLOOG, K ;

BAUSER, E ;

KANO, H .

PHYSICAL REVIEW B, 1990, 41 (03) :1461-1478

[5] HOT-ELECTRON RECOMBINATION AT NEUTRAL ACCEPTORS IN GAAS - A CW PROBE OF FEMTOSECOND INTERVALLEY SCATTERING - REPLY [J].

KASH, JA ;

TSANG, JC ;

ULBRICH, RG .

PHYSICAL REVIEW LETTERS, 1990, 65 (02) :275-275

[6] SUBPICOSECOND TIME-RESOLVED RAMAN-SPECTROSCOPY OF LO PHONONS IN GAAS [J].

KASH, JA ;

TSANG, JC ;

HVAM, JM .

PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2151-2154

[7] SECONDARY-EMISSION STUDIES OF HOT CARRIER RELAXATION IN POLAR SEMICONDUCTORS [J].

KASH, JA ;

TSANG, JC .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :419-424

[8] HOT PHOTOLUMINESCENCE SPECTROSCOPY INVESTIGATIONS OF L-VALLEY SPLITTING AND INTERVALLEY SCATTERING IN UNIAXIALLY STRESSED GALLIUM-ARSENIDE [J].

MIRLIN, DN ;

SAPEGA, VF ;

KARLIK, IY ;

KATILIUS, R .

SOLID STATE COMMUNICATIONS, 1987, 61 (12) :799-802

[9]

RYAN JF, 1992, HOT CARRIERS SEMICON, P345

[10] DETERMINATION OF INTERVALLEY SCATTERING RATES IN GAAS BY SUBPICOSECOND LUMINESCENCE SPECTROSCOPY [J].

SHAH, J ;

DEVEAUD, B ;

DAMEN, TC ;

TSANG, WT ;

GOSSARD, AC ;

LUGLI, P .

PHYSICAL REVIEW LETTERS, 1987, 59 (19) :2222-2225

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