RESONANT INTERVALLEY SCATTERING IN GAAS

被引：28

作者：

BIGOT, JY

PORTELLA, MT

SCHOENLEIN, RW

CUNNINGHAM, JE

SHANK, CV

机构：

[1] Lawrence Berkeley Laboratory, University of California, MS:70-110A, Berkeley

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 27期

关键词：

D O I：

10.1103/PhysRevLett.65.3429

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The dynamics of intervalley scattering of electrons is investigated in GaAs with 6-fs optical pulses at room temperature. We report the observation of a "resonant coupling" between T and X conduction bands. This effect slows the apparent rate of scattering of carriers in the T valley at energies near the minimum of the X valley.

引用

页码：3429 / 3432

页数：4

共 15 条

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