BAND BENDING AND OXYGEN-INDUCED DEFECTS IN A-SI-H

被引：10

作者：

WINER, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1226 / 1231

页数：6

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