CONTACTLESS MEASUREMENT OF CARRIER LIFETIME IN SEMICONDUCTOR WAFERS BY USE OF STRIP LINES

被引：13

作者：

OGITA, Y

机构：

来源：

关键词：

D O I：

10.1143/JJAP.19.2309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2309 / 2310

页数：2

共 6 条

[1] DEB S, 1962, APPL PHYS LETT, V33, P1604
[2] JACOBS H, 1959, J APPL PHYS, V30, P1054
[3] KATO K, 1977, QQE774 IECE OPT QUAN
[4] NONDESTRUCTIVE METHOD FOR MEASURING THE SPATIAL-DISTRIBUTION OF MINORITY-CARRIER LIFETIME IN SILICON WAFER
MADA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2171 - 2172
[5] OGITA Y, 1978, OYO BUTURI, V47, P662
[6] MEASUREMENT OF DIFFUSION LENGTH IN SOLAR CELLS
REYNOLDS, JH
MEULENBERG, A
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2582 - 2592