TEMPERATURE-DEPENDENT INFLUENCE OF IONIZED-IMPURITY SCATTERING ON THE CYCLOTRON-RESONANCE LINEWIDTH OF ALXGA1-XAS/GAAS HETEROSTRUCTURES

被引:7
作者
DREXLER, H [1 ]
GRAF, P [1 ]
BESSON, M [1 ]
GORNIK, E [1 ]
WEIMANN, G [1 ]
LASSNIG, R [1 ]
机构
[1] UNIV INNSBRUCK,INST EXPTL PHYS,A-6020 INNSBRUCK,AUSTRIA
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 07期
关键词
D O I
10.1103/PhysRevB.44.3105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cyclotron-resonance transmission experiments were performed on an Al(x)Ga(1-x)As/GaAs heterostructure and compared with self-consistent calculations of the dynamical conductivity of the two-dimensional electron gas (2D EG). It is found that the dominant scatterers for filling factor-nu < 2 are the ionized impurities in the vicinity range of the 2D EG. A sharp step accompanied by a strong decrease of linewidth for nu less-than-or-equal-to 1 was observed for T = 1.2 K and is attributed to an inhomogeneous distribution of the electrons over the sample. This is modeled in the calculations by an effective density of scatterers. The temperature-dependent measurements are explained with the basic assumption of a spatial separation between repulsive scatterers and the electrons.
引用
收藏
页码:3105 / 3109
页数:5
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