X-RAY-DIAGNOSTICS OF THE ELASTIC STRESS GRADIENT IN CRYSTALS

被引：7

作者：

ARISTOV, VV

GOUREEV, TE

NIKULIN, AY

SNIGIREV, AA

机构：

[1] Institute of Microelectronics Technology and High Purity Materials, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 127卷 / 01期

关键词：

D O I：

10.1002/pssa.2211270104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental and computer simulation results of X-ray diffraction investigation of the influence of the elastic stress gradient of the periodically distorted near-surface region in the silicon single crystal on the tail intensity of differential rocking curves are presented. The possibility of measuring this gradient using X-ray diffraction data is shown.

引用

页码：33 / 42

页数：10

共 5 条

[1] POSSIBILITIES OF X-RAY INTERFERENCE DIFFRACTOMETRY FOR THE INVESTIGATION OF ION-DOPED LAYERS [J].

ARISTOV, VV ;

MORDKOVICH, VN ;

NIKULIN, AY ;

SNIGIREV, AA ;

WINTER, U ;

EROKHIN, YN ;

ZAUMSEIL, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01) :K1-K5

[2]

ARISTOV VV, 1988, POVERKHN FIZ KHIM ME, P41

[3]

ARISTOV VV, 1988, MIKROELEKTRONIKA, V17, P518

[4]

ARISTOV VV, IN PRESS SEMICOND SC

[5] A DYNAMICAL THEORY OF DIFFRACTION FOR A DISTORTED CRYSTAL [J].

TAKAGI, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (05) :1239-&

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