MAJORITY CARRIER INJECTION MECHANISM AT THE SEMICONDUCTOR-ELECTROLYTE INTERFACE

被引：9

作者：

JAUME, J ^{[1
]}

DEBIEMMECHOUVY, C ^{[1
]}

VIGNERON, J ^{[1
]}

HERLEM, M ^{[1
]}

KHOUMRI, EM ^{[1
]}

SCULFORT, JL ^{[1
]}

LEROY, D ^{[1
]}

ETCHEBERRY, A ^{[1
]}

机构：

[1] IUT TROYES,DEPT GMP,F-10026 TROYES,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1994年 / 4卷 / 02期

关键词：

D O I：

10.1051/jp3:1994129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The semiconductor/electrolyte junction can be used in order to detect easily electron and/or hole injection processes related to chemical species bound to the crystal lattice. These phenomena take place when multielectronic electrochemical reactions occur at the interface, such as reductions (oxygen, hydrogen peroxide) or oxidations (photoanodic decomposition). In this paper a comparison between GaAs and InP has been analyzed. The parts played in the overall electrochemical process by reaction intermediates and surface films are discussed.

引用

页码：273 / 291

页数：19

共 37 条

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