THEORETICAL INTERPRETATION OF SCHOTTKY BARRIERS AND OHMIC CONTACTS

被引:33
作者
ALLEN, RE
SANKEY, OF
DOW, JD
机构
[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287
[2] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556
关键词
D O I
10.1016/0039-6028(86)90867-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:376 / 385
页数:10
相关论文
共 55 条
[1]   FERMI-LEVEL PINNING AT HETEROJUNCTIONS [J].
ALLEN, RE ;
BERES, RP ;
DOW, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :401-403
[2]   ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].
ALLEN, RE ;
DOW, JD .
PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426
[3]   THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS [J].
ALLEN, RE ;
HUMPHREYS, TJ ;
DOW, JD ;
SANKEY, OF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :449-452
[4]   ELECTRONIC-ENERGY LEVELS OF POINT-DEFECTS AT THE GASB (110) SURFACE [J].
ALLEN, RE ;
DOW, JD ;
HJALMARSON, HP .
SOLID STATE COMMUNICATIONS, 1982, 41 (05) :419-422
[5]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[6]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[7]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[8]   EXPERIMENTAL-EVIDENCE OF GAP STATES IN METAL GAAS INTERFACES [J].
CHEKIR, F ;
BARRET, C .
SURFACE SCIENCE, 1986, 168 (1-3) :838-845
[9]   ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].
CHERNS, D ;
ANSTIS, GR ;
HUTCHISON, JL ;
SPENCE, JCH .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862
[10]   VACANCIES NEAR SEMICONDUCTOR SURFACES [J].
DAW, MS ;
SMITH, DL .
PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156