THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS

被引：42

作者：

ALLEN, RE

HUMPHREYS, TJ

DOW, JD

SANKEY, OF

机构：

[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

[2] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：449 / 452

页数：4

相关论文

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[7] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY
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[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895
[8] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
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[9] BOUND AND RESONANT (110) SURFACE ELECTRONIC STATES FOR GAAS, GAP AND GASB
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[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (01) : 13 - 16
[10] BERES RP, 1982, THESIS TEXAS A M U

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