FERMI-LEVEL PINNING AT HETEROJUNCTIONS

[1] ALLEN R, UNPUB

[2] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387

[3] GREEN-FUNCTIONS FOR SURFACE PHYSICS [J]. PHYSICAL REVIEW B, 1979, 20 (04): : 1454 - 1472

[4] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426

[5] ELECTRONIC-ENERGY LEVELS OF POINT-DEFECTS AT THE GASB (110) SURFACE [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (05) : 419 - 422

[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[7] STUDY OF THE ELECTRONIC-STRUCTURE OF MODEL (110) SURFACES AND INTERFACES OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTORS - THE GASB-INAS SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5687 - 5705

[8] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[9] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 659 - 661

[10] ON THE CHEMISORPTION OF GE ON GAAS(110) SURFACES - UPS AND WORK FUNCTION MEASUREMENTS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 332 - 347

[1] ALLEN R, UNPUB

[2] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387

[3] GREEN-FUNCTIONS FOR SURFACE PHYSICS [J]. PHYSICAL REVIEW B, 1979, 20 (04): : 1454 - 1472

[4] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426

[5] ELECTRONIC-ENERGY LEVELS OF POINT-DEFECTS AT THE GASB (110) SURFACE [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (05) : 419 - 422

[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[7] STUDY OF THE ELECTRONIC-STRUCTURE OF MODEL (110) SURFACES AND INTERFACES OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTORS - THE GASB-INAS SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5687 - 5705

[8] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[9] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 659 - 661

[10] ON THE CHEMISORPTION OF GE ON GAAS(110) SURFACES - UPS AND WORK FUNCTION MEASUREMENTS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 332 - 347