STUDY OF THE ELECTRONIC-STRUCTURE OF MODEL (110) SURFACES AND INTERFACES OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTORS - THE GASB-INAS SYSTEM

被引：18

作者：

DANDEKAR, NV ^{[1
]}

MADHUKAR, A ^{[1
]}

LOWY, DN ^{[1
]}

机构：

[1] UNIV NEW S WALES,DEPT THEORET PHYS,KENSINGTON,NSW 2033,AUSTRALIA

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.21.5687

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5687 / 5705

页数：19

共 39 条

[1] ALLAN G, 1978, SURFACE STATES MATER
[2] EFFECTS OF CATION ORDER ON ENERGY-BANDS OF GAAS-ALAS HETEROSTRUCTURES
ANDREONI, W
BALDERESCHI, A
CAR, R
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (09) : 821 - 824
[3] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE
BARAFF, GA
APPELBAUM, JA
HAMANN, DR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 999 - 1005
[4] PSEUDOPOTENTIAL CALCULATIONS FOR ULTRATHIN LAYER HETEROSTRUCTURES
CARUTHERS, E
LINCHUNG, PJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1459 - 1464
[5] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
CHADI, DJ
COHEN, ML
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : 405 - 419
[6] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[7] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, LL
ESAKI, L
HOWARD, WE
LUDEKE, R
SCHUL, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662
[8] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES
CHANG, LL
SAIHALASZ, GA
KAWAI, NJ
ESAKI, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1504 - 1505
[9] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[10] EXISTENCE OF LOCALIZED ELECTRONIC STATES AT INTERFACES
DOBRZYNSKI, L
CUNNINGHAM, SL
WEINBERG, WH
[J]. SURFACE SCIENCE, 1976, 61 (02) : 550 - 562

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