ON THE CHEMISORPTION OF GE ON GAAS(110) SURFACES - UPS AND WORK FUNCTION MEASUREMENTS

被引：19

作者：

GANT, H ^{[1
]}

MONCH, W ^{[1
]}

机构：

[1] UNIV DUISBURG GESAMTHSCH, FESTKORPERPHYS LAB, D-4100 DUISBURG, FED REP GER

来源：

APPLICATIONS OF SURFACE SCIENCE | 1982年 / 11-2卷 / JUL期

关键词：

D O I：

10.1016/0378-5963(82)90080-0

中图分类号：

学科分类号：

摘要：

引用

页码：332 / 347

页数：16

共 37 条

[1] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[2] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM
BARAFF, GA
KANE, EO
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686
[3] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[4] BAUER RS, 1981, J VACUUM SCI TECHNOL, V18
[5] CLEMENS H, UNPUB
[6] INTERACTION OF CESIUM WITH CLEAVED GAAS(110) AND GE(111) SURFACES - WORK FUNCTION MEASUREMENTS AND ADSORPTION SITE MODEL
CLEMENS, HJ
WIENSKOWSKI, JV
MONCH, W
[J]. SURFACE SCIENCE, 1978, 78 (03) : 648 - 666
[7] CLEMENS HJ, 1979, THESIS U DUISBURG
[8] DAW M, 1981, J VACUUM SCI TECHNOL, V18
[9] RELATION BETWEEN THE COMMON ANION RULE AND THE DEFECT MODEL OF SCHOTTKY-BARRIER FORMATION
DAW, MS
SMITH, DL
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 205 - 208
[10] VACANCIES NEAR SEMICONDUCTOR SURFACES
DAW, MS
SMITH, DL
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156