FORMATION OF LUMINESCENT SILICON BY LASER ANNEALING OF A-SIH

被引：16

作者：

ELKADER, KMA

OSWALD, J

KOCKA, J

CHAB, V

机构：

[1] Institute of Physics, AVČR, 162 00 Praha 6

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the preparation of luminescent Si by laser annealing of amorphous hydrogenated silicon (a-Si:H) deposited on a silica substrate by glow-discharge deposition. For this process, we have used XeCl excimer laser pulses with an energy density in the range of 0.3-0.7 J/cm2. While no visible photoluminescence (PL) has been observed at room temperature from the unirradiated a-Si:H the PL comparable to the PL spectra of porous Si occurs in the irradiated part. The electron microscope studies reveal a microstructure which is a function of the pulse number and the pulse energy density.

引用

页码：2555 / 2556

页数：2

共 15 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].