ROOM-TEMPERATURE EPITAXIAL-GROWTH OF CEO2 THIN-FILMS ON SI(111) SUBSTRATES FOR FABRICATION OF SHARP OXIDE/SILICON INTERFACE

被引：98

作者：

YOSHIMOTO, M

SHIMOZONO, K

MAEDA, T

OHNISHI, T

KUMAGAI, M

CHIKYOW, T

ISHIYAMA, O

SHINOHARA, M

KOINUMA, H

机构：

[1] KSP,KANAGAWA HIGH TECHNOL FDN,MAT CHARACTERIZAT LAB,TAKATSU KU,KAWASAKI,KANAGAWA 213,JAPAN

[2] NATL RES INST MET,TSUKUBA,IBARAKI 305,JAPAN

[3] SHIMADZU CO LTD,KEIHANNA RES LAB,KYOTO 61902,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6A期

关键词：

ROOM-TEMPERATURE EPITAXY; PULSED LASER DEPOSITION; LASER MBE; CEO2 THIN FILM; OXIDE SILICON SHARP HETEROINTERFACE;

D O I：

10.1143/JJAP.34.L688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature (20 degrees C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(111) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.

引用

页码：L688 / L690

页数：3

共 15 条

[1] QUANTITATIVE SURFACE ATOMIC GEOMETRY AND TWO-DIMENSIONAL SURFACE ELECTRON-DISTRIBUTION ANALYSIS BY A NEW TECHNIQUE IN LOW-ENERGY ION-SCATTERING [J].