A STUDY OF THIN BURIED LAYERS IN III-V COMPOUND HETEROSTRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION

被引：17

作者：

BOCCHI, C

FERRARI, C

机构：

[1] CNR-MASPEC Institute, Parma, 43100

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 4A期

关键词：

D O I：

10.1088/0022-3727/28/4A/032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method based on x-ray interference for the characterization of extremely thin buried single layers by means of high-resolution x-ray diffraction is presented. The independent determination of layer composition and thickness is obtained by comparing measurements performed in at least two different settings, one of which in the asymmetric grazing emergence geometry. The method is applied to study In segregation in InAs/GaAs monolayers grown by molecular beam epitaxy. In segregation lengths of nearly 6 Angstrom are measured.

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页码：A164 / A168

页数：5

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