AN IMPROVED METHOD OF MOSFET MODELING AND PARAMETER EXTRACTION

[11] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[12] SZE SM, 1981, PHYSICS SEMICONDUCTO

[13] HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 899 - 906

[14] WONG HS, 1987, IN PRESS SOLID STATE

[11] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[12] SZE SM, 1981, PHYSICS SEMICONDUCTO

[13] HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 899 - 906

[14] WONG HS, 1987, IN PRESS SOLID STATE