CHEMICAL VAPOR-DEPOSITION OF ALUMINUM SILICATE THIN-FILMS

被引：25

作者：

APBLETT, AW

CHEATHAM, LK

BARRON, AR

机构：

[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138

[2] HARVARD UNIV,MAT RES LAB,CAMBRIDGE,MA 02138

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1991年 / 1卷 / 01期

关键词：

ALUMINUM SILICATE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILM;

D O I：

10.1039/jm9910100143

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Aluminium silicate (Al2O3)x(SiO2)y, thin films have been grown by atmospheric pressure metal-organic vapour deposition using the volatile metal organic precursor [Al(OSiEt3)3]2. As determined by X-ray photoelectron spectroscopy, the deposited films consisted of a mixture of Al2O3, SiO2, and an aluminosilicate.

引用

页码：143 / 144

页数：2

共 8 条

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