COMPLICATED QUASIPARTICLE COMPLEXES IN THIN SEMICONDUCTOR-FILMS

被引：5

作者：

DZHOTYAN, AP

KAZARIAN, EM

ENFIADJIAN, RL

机构：

[1] Faculty of Physics, Yerevan State University, Yerevan

来源：

THIN SOLID FILMS | 1979年 / 60卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90074-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of complicated quasi-particle complexes (mainly the biexciton ions, the exciton molecules and exciton-donor neutral complexes) in thin semiconductor films has been investigated theoretically. Analytical expressions have been obtained for the dissociation energies of these quasi-particle complexes as functions of the ratio of the effective mass of the electron to that of the hole. The conditions for the formation of such complexes are shown to be more favourable in thin films than in bulk semiconductors. The influence of a homogeneous magnetic field on the dissociation energy of biexciton ions in a bulk semiconductor is also investigated. © 1979.

引用

页码：279 / 287

页数：9

共 17 条

[1]

CATHBERT JD, 1970, J LUMIN, V1, P307

[2]

DZHOTYAN AP, 1976, FIZ TEKH POLUPROVODN, V10, P2149

[3] THEORY OF THE ABSORPTION EDGE IN SEMICONDUCTORS IN A HIGH MAGNETIC FIELD [J].