LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .2. APPLICATIONS TO SCHOTTKY-BARRIER DIODE ADJUSTMENT AND TO ION-IMPLANTED RESISTORS

被引:9
作者
CHU, WK
SULLIVAN, MJ
KU, SM
SHATZKES, M
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期
关键词
D O I
10.1080/00337578008209180
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
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页码:7 / 14
页数:8
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