THERMIONIC-FIELD EMISSION THROUGH SILICON SCHOTTKY BARRIERS AT ROOM-TEMPERATURE

被引：23

作者：

SHANNON, JM ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 10期

关键词：

D O I：

10.1016/0038-1101(77)90176-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：869 / 872

页数：4

共 12 条

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LEPSELTER, MP .

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[2]

[Anonymous], 1971, SEMICONDUCT SEMIMET

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SZE, SM .

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RHODERICK, EH .

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RIDEOUT, VL .

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[7] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

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[8] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[9] REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1974, 24 (08) :369-371

[10] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].

SHANNON, JM .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543

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