REFRACTORY MOSI2 AND MOSI2 POLYSILICON BULK CMOS CIRCUITS

被引：7

作者：

CHOW, TP ^{[1
]}

STECKL, AJ ^{[1
]}

JERDONEK, RT ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期

关键词：

D O I：

10.1109/EDL.1982.25469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 40

页数：4

共 10 条

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5380 - 5385
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