THE ELECTRONIC-STRUCTURE OF SI(100) AND AS/SI(100) SURFACES

被引：6

作者：

SHEN, TH

MATTHAI, CC

机构：

[1] Dept. of Phys., Univ. of Wales, Coll. of Cardiff

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 32期

关键词：

D O I：

10.1088/0953-8984/3/32/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tight binding method in the extended Huckel approximation. The results are compared with the reconstructed silicon (100) surface, and the passivation of the silicon surface is discussed in context of our results.

引用

页码：6169 / 6172

页数：4

共 7 条

[1]

ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6

[2] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE [J].