STITCHING AL FILMS ON SIO2 SUBSTRATES BY AL ION-IMPLANTATION

被引：3

作者：

SU, XW

ZHANG, QY

JIN, S

WANG, R

SHI, WD

LI, GB

ZHANG, GB

MA, TC

机构：

[1] National Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90785-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Al ion implantation has been used to stitch Al films on SiO2 substrates. The thickness of Al films was about 1000 angstrom. Ion implantation was performed with 70 keV Al+ at doses of 5 x 10(15) and 5 x 10(16) Al/cm2 by use of MEVVA IV 80-10 ion implantation system. The adhesion was determined by a scratch test. It was shown that the film adhesion had been noticeably improved. The changes in hardness, morphology and composition distribution of the Al films on SiO2 substrates were examined by a microhardness tester, transmission electron microscopy and Auger electron spectroscopy. We also investigated the mechanisms that contribute to the enhanced adhesion and microhardness.

引用

页码：1296 / 1299

页数：4

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