INELASTIC LIGHT-SCATTERING STUDIES OF CHEMICAL VAPOR-DEPOSITION SYSTEMS

被引：42

作者：

SMITH, JE ^{[1
]}

SEDGWICK, TO ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1977年 / 40卷 / JAN期

关键词：

D O I：

10.1016/0040-6090(77)90098-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1 / 11

页数：11

相关论文

共 22 条

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
BAN, VS
GILBERT, SL
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289
[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388
[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1389 - 1391
[4] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 761 - &
[5] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &
[6] BAN VS, 1974, MAY EL SOC M SAN FRA
[7] BRECHER LE, 1973, 4TH P INT C CHEM VAP, P340
[8] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
BRYANT, WA
MEIER, GH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 559 - 565
[9] COCHET G, 1975, 5TH P INT C CVD, P43
[10] EVERSTEIJN FC, 1971, PHILIPS RES REP, V26, P134