CRYSTAL-GROWTH, CHARACTERIZATION AND RESISTIVITY MEASUREMENTS OF PD2SI SINGLE-CRYSTALS

被引:10
作者
MARANI, R [1 ]
NAVA, F [1 ]
ROUAULT, A [1 ]
MADAR, R [1 ]
SENATEUR, JP [1 ]
机构
[1] INST NATL POLYTECH GRENOBLE,ECOLE NATL SUPER PHYS GRENOBLE,LMPG,F-38402 ST MARTIN DHERES,FRANCE
关键词
D O I
10.1088/0953-8984/1/34/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:5887 / 5893
页数:7
相关论文
共 23 条
[1]   ANISOTROPIC TEMPERATURE-DEPENDENT RESISTIVITY OF CD, ZN, AND MG [J].
ALDERSON, JEA ;
HURD, CM .
PHYSICAL REVIEW B, 1975, 12 (02) :501-508
[2]   INFRARED AND DC CONDUCTIVITY IN METALS WITH STRONG SCATTERING - NON-CLASSICAL BEHAVIOR FROM A GENERALIZED BOLTZMANN-EQUATION CONTAINING BAND-MIXING EFFECTS [J].
ALLEN, PB ;
CHAKRABORTY, B .
PHYSICAL REVIEW B, 1981, 23 (10) :4815-4827
[3]   DEVIATIONS FROM MATTHIESSENS RULE [J].
BASS, J .
ADVANCES IN PHYSICS, 1972, 21 (91) :431-&
[4]  
BLATT FJ, 1968, PHYSICS ELECTRONIC C
[5]   STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].
BUCKLEY, WD ;
MOSS, SC .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&
[6]   Anisotropy of the temperature-dependent resistivity of tin between 8 and 300 degrees K [J].
Case, S. K. ;
Gueths, J. E. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :3843-3848
[7]  
CATON R, 1981, PHYS REV B, V25, P4815
[8]   IOFFE-REGEL CRITERION AND RESISTIVITY OF METALS [J].
GURVITCH, M .
PHYSICAL REVIEW B, 1981, 24 (12) :7404-7407
[9]   ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J].
HENSEL, JC ;
TUNG, RT ;
POATE, JM ;
UNTERWALD, FC .
APPLIED PHYSICS LETTERS, 1984, 44 (09) :913-915
[10]   ELECTRONIC TRANSPORT-PROPERTIES OF TISI2 THIN-FILMS [J].
MALHOTRA, V ;
MARTIN, TL ;
MAHAN, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :10-16