ELECTRONIC TRANSPORT-PROPERTIES OF TISI2 THIN-FILMS

被引：44

作者：

MALHOTRA, V ^{[1
]}

MARTIN, TL ^{[1
]}

MAHAN, JE ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CONDENSED MATTER SCI LAB,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

TITANIUM SILICIDE;

D O I：

10.1116/1.582905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：10 / 16

页数：7

共 24 条

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MAENPAA, M ;

FINETTI, M ;

NICOLET, MA .

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[3]

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[4]

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[5]

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[6]

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[7]

MALHOTRA V, UNPUB

[8]

MEADEN GI, 1965, ELECTRICAL RESISTANC

[9]

MOTT NF, 1958, THEORY PROPERTIES ME, pCH7

[10] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :342-349

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